完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Kuan-Ju | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Lin, Chien-Yu | en_US |
dc.contributor.author | Chen, Ching-En | en_US |
dc.contributor.author | Tsai, Jyun-Yu | en_US |
dc.contributor.author | Lu, Ying-Hsin | en_US |
dc.contributor.author | Liu, Hsi-Wen | en_US |
dc.contributor.author | Cheng, Osbert | en_US |
dc.contributor.author | Huang, Cheng-Tung | en_US |
dc.date.accessioned | 2017-04-21T06:55:25Z | - |
dc.date.available | 2017-04-21T06:55:25Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/2.0121606jss | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/133841 | - |
dc.description.abstract | This work demonstrates an abnormal transconductance (GM) enhancement after positive bias stress (PBS) in n-channel high-k/metal gate stacked fin-field-effect-transistors. This abnormal GM enhancement is observed only in short channel devices. With the speculation that hole-trapping-induced electron accumulation is the dominant mechanism, PBS with floating source and drain is adopted as an investigative approach. This, together with the electric field simulation, verifies that hole-trapping in the HfO2 and SiN near the gate corner induces electron accumulated at the ends of the channel length. Such a phenomenon results in a shortening of effective channel length and further GM enhancement. (C) 2016 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Abnormal Transconductance Enhancement under Positive Bias Stress in Nanoscale n-Channel Fin Field-Effect-Transistors | en_US |
dc.identifier.doi | 10.1149/2.0121606jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | Q155 | en_US |
dc.citation.epage | Q159 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000377224700024 | en_US |
顯示於類別: | 期刊論文 |