標題: | Hot-carrier effects in p-channel modified Schottky-barrier FinFETs |
作者: | Lin, CP Tsui, BY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | FinFET;hot carrier;Schottky-barrier (SB);silicon-on-insulator (SOI) |
公開日期: | 1-六月-2005 |
摘要: | High-performance p-channel modified Schottky-barrier SOI FinFETs (MSB pFinFETs) with low temperature source/drain annealing process was recently suggested for future nano-scale devices. In this letter, the hot-carrier (HC) immunity of the MSB pFinFETs with different gate lengths (L-g) and fin widths (W-f) are presented. The experimental data shows that the MSB pFinFET with narrower W-f has less hot carrier degradation than that with wider W-f. The effects of electrical field in Si fins induced from lateral-gate electrode and the degree of uniformity of source/drain extension are illustrated cautiously by two-dimensional simulation and transmission electron microscopy (TEM) micrographs, respectively. It is found that the devices with narrower W-f have weaker electrical field from gate electrode and better uniformity of source/drain extension resulting in superior hot-carrier immunity. The projected operation voltage at ten years dc lifetime exceeds 1.6 V as the W-f is narrower than 60 nm. It is thus concluded that the MSB pFinFET would be a very promising nano device. |
URI: | http://dx.doi.org/10.1109/LED.2005.848096 http://hdl.handle.net/11536/13640 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2005.848096 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 6 |
起始頁: | 394 |
結束頁: | 396 |
顯示於類別: | 期刊論文 |