標題: Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs
作者: Hsu, Chung-Chun
Chi, Wei-Chun
Tsai, Yi-He
Chou, Chen-Han
Chen, Che-Wei
Chien, Hung-Pin
Chuang, Shang-Shiun
Luo, Guang-Li
Lee, Yao-Jen
Chien, Chao-Hsin
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Crystallinity;microwave-activated annealing (MWA);NiGePt;p-channel MOSFET (pMOSFET);Schottky barrier height (SBH);ternary-phase alloy
公開日期: Jul-2016
摘要: This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys using MWA properties such as thermal dynamics and ionic transportation. The ternary-phase NiGePt alloy is crucial for improving the off-leakage current of the junction. A lower process temperature is beneficial for eliminating surface roughness and reducing alloy agglomeration of the Schottky contact S/D. Consequently, the fabricated NiGePt/n-Ge Schottky junction exhibited a high effective barrier height (Phi(Bn)) of 0.59 eV, resulting in a high junction current ratio of more than 10(5) at an applied voltage of vertical bar V-a vertical bar = 1 V. In addition, we exploited the advantages of low-temperature microwave annealing to fabricate the pMOSFET, which includes a GeO2 passivation layer and a Schottky S/D. Our ternary Schottky Ge pMOSFET (L = 4 mu m) exhibited high I-ON/I-OFF ratios of approximately 3.7x10(3)(I-D) and 1.3x10(5)(I-S) and a moderate subthreshold swing of 126 mV/dec.
URI: http://dx.doi.org/10.1109/TED.2016.2570284
http://hdl.handle.net/11536/133898
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2570284
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 7
起始頁: 2714
結束頁: 2721
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