標題: [INVITED] Total-internal-reflection-based photomask for large-area photolithography
作者: Hung, Shao-Kang
Lin, Kung-Hsuan
Chen, Cheng-Lung
Chou, Chen-Hsun
Lin, You-Chuan
機械工程學系
Department of Mechanical Engineering
公開日期: 五月-2016
摘要: Photolithography has been widely implemented with a photomask in contact or in close proximity to the photoresist layer. The flatness of the substrates is a crucial factor to guarantee the quality of the entire patterned photoresist (PR) layer especially for large-area photolithography. However, some substrates, such as sapphire wafers, do not possess highly uniform thickness as silicon wafer does. In this work, we demonstrate that a flexible polydimethylsiloxane (PDMS) photomask with optical total-internal-reflection structure can effectively circumvent this problem for mass production. Different from conventional photomask that the light is blocked by the patterned reflective/absorbing materials, the distributions of light intensity on the PR is engineered by the geometric structure of the transparent PDMS photomask. We demonstrate that 4 in. patterned sapphire wafers can be successfully fabricated by using this PDMS photomask, which can be easily integrated into the present techniques in industry for mass production of substrates for GaN-based optoelectronic devices. (C) 2015 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.optlastec.2015.11.016
http://hdl.handle.net/11536/133902
ISSN: 0030-3992
DOI: 10.1016/j.optlastec.2015.11.016
期刊: OPTICS AND LASER TECHNOLOGY
Volume: 79
起始頁: 39
結束頁: 44
顯示於類別:期刊論文