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dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChang, Chih-Hsiangen_US
dc.contributor.authorChang, Chih-Juien_US
dc.date.accessioned2017-04-21T06:56:37Z-
dc.date.available2017-04-21T06:56:37Z-
dc.date.issued2016-06-27en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4954978en_US
dc.identifier.urihttp://hdl.handle.net/11536/133917-
dc.description.abstractThis study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleSuppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structureen_US
dc.identifier.doi10.1063/1.4954978en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume108en_US
dc.citation.issue26en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000379178200012en_US
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