| 標題: | 高效能低操作偏壓非晶氧化銦鎢薄膜電晶體之研究 Study on High Performance Amorphous Indium Tungsten Oxide Thin Film Transistors with Low Operation Voltage |
| 作者: | 張建民 劉柏村 Chang, Chien-Min Liu, Po-Tsun 光電工程研究所 |
| 關鍵字: | 非晶氧化物半導體;氧化銦鎢薄膜電晶體;超薄通道元件;無接面元件;低操作偏壓;Amorphous Oxide Semiconductors;Indium tungsten oxide thin film transistor;Ultra-thin body device;Junctionless device;low operation voltage |
| 公開日期: | 2017 |
| URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450530 http://hdl.handle.net/11536/141759 |
| 顯示於類別： | 畢業論文 |
- Low Thermal Budget Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Near Ideal Subthreshold Swing / Kuo, Po-Yi;Chang, Chien-Min;Liu, Po-Tsun
- The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure / Ruan, Dun-Bao;Liu, Po-Tsun;Gan, Kai-Jhih;Chiu, Yu-Chuan;Yu, Min-Chin
- High Performance Amorphous In-W-Zn-O Thin Film Transistor with Ultra-Thin Active Channel for Low Voltage Operation / Liu, Po-Tsun;Kuo, Po-Yi;Hsu, Shan-Ming
- Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions / Qu, Mingyue;Chang, Chih-Hsiang;Meng, Ting;Zhang, Qun;Liu, Po-Tsun
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