完整後設資料紀錄
DC 欄位語言
dc.contributor.authorMa, Chun-Haoen_US
dc.contributor.authorLin, Jheng-Cyuanen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorThi Hien Doen_US
dc.contributor.authorZhu, Yuan-Minen_US
dc.contributor.authorThai Duy Haen_US
dc.contributor.authorZhan, Qianen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorArenholz, Elkeen_US
dc.contributor.authorChiu, Po-Wenen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2017-04-21T06:56:33Z-
dc.date.available2017-04-21T06:56:33Z-
dc.date.issued2016-06-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4954172en_US
dc.identifier.urihttp://hdl.handle.net/11536/133927-
dc.description.abstractFlexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO2 films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO2 films are similar to those of the bulk. Flexible or free-standing MoO2 thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleVan der Waals epitaxy of functional MoO2 film on mica for flexible electronicsen_US
dc.identifier.doi10.1063/1.4954172en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume108en_US
dc.citation.issue25en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000379039900030en_US
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