標題: Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
作者: Huang, Wei-Ching
Chu, Chung-Ming
Wong, Yuen Yee
Chen, Kai-Wei
Lin, Yen-Ku
Wu, Chia-Hsun
Lee, Wei-I
Chang, Edward-Yi
材料科學與工程學系
電機學院
Department of Materials Science and Engineering
College of Electrical and Computer Engineering
關鍵字: GaN;AlN buffer;MOCVD;temperature
公開日期: Apr-2016
摘要: The effects of different AlN buffer deposition temperatures on the GaN material properties grown on sapphire substrate was investigated. At relatively higher AlN buffer growth temperature, the surface morphology of subsequent grown GaN layer was decorated with island-like structure and revealed the mixed-polarity characteristics. In addition, the density of screw TD and leakage current in the GaN film was also increased. The occurrence of mixed-polarity GaN material result could be from unintentional nitridation of the sapphire substrate by ammonia (NH3) precursor at the beginning of the AlN buffer layer growth. By using two-step temperature growth process for the buffer layer, the unintentional nitridation could be effectively suppressed. The GaN film grown on this buffer layer exhibited a smooth surface, single polarity, high crystalline quality and high resistivity. AlGaN/GaN high electron-mobility transistor (HEMT) devices were also successfully fabricated by using the two-step AlN buffer layer. (C) 2016 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mssp.2016.01.008
http://hdl.handle.net/11536/133935
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2016.01.008
期刊: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume: 45
起始頁: 1
結束頁: 8
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