標題: Effects of erbium doping of indium tin oxide electrode in resistive random access memory
作者: Chen, Po-Hsun
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Pan, Chih-Hung
Lin, Chih-Yang
Jin, Fu-Yuan
Chen, Min-Chen
Huang, Hui-Chun
Lo, Ikai
Zheng, Jin-Cheng
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 三月-2016
摘要: Identical insulators and bottom electrodes were fabricated and capped by an indium tin oxide (ITO) film, either undoped or doped with erbium (Er), as a top electrode. This distinctive top electrode dramatically altered the resistive random access memory (RRAM) characteristics, for example, lowering the operation current and enlarging the memory window. In addition, the RESET voltage increased, whereas the SET voltage remained almost the same. A conduction model of Er-doped ITO is proposed through current-voltage (I-V) measurement and current fitting to explain the resistance switching mechanism of Er-doped ITO RRAM and is confirmed by material analysis and reliability tests. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.9.034202
http://hdl.handle.net/11536/134024
ISSN: 1882-0778
DOI: 10.7567/APEX.9.034202
期刊: APPLIED PHYSICS EXPRESS
Volume: 9
Issue: 3
顯示於類別:期刊論文