Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers

Abstract

We have grown high-quality InGaAs/GaAs quantum wells (QWs) with emission wavelength range of 1.2-1.26 mu m by metalorganic chemical vapor depositions. By incorporating Sb surfactant and the indium-graded intermediate layers into InGaAs/GaAs QWs, the photoluminescence (PL) intensity of the 1.26-mu m In0.45Ga0.55As/GaAs QW is enhanced by a factor of 20 and the full width at half maximum value is reduced from 60.4 meV to 35.9 meV. The good crystalline quality is proved by temperature-dependent PL, which shows that the activation energies of In0.45Ga0.55As and Sb-assisted indium-graded In0.45Ga0.55As QWs are 20.87 meV and 27.09 meV. (c) 2005 American Institute of Physics.