Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers

doi:10.1063/1.2009048

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DC 欄位	值	語言
dc.contributor.author	Chang, YA	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Chang, YH	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:18:38Z	-
dc.date.available	2014-12-08T15:18:38Z	-
dc.date.issued	2005-08-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2009048	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13404	-
dc.description.abstract	We have grown high-quality InGaAs/GaAs quantum wells (QWs) with emission wavelength range of 1.2-1.26 mu m by metalorganic chemical vapor depositions. By incorporating Sb surfactant and the indium-graded intermediate layers into InGaAs/GaAs QWs, the photoluminescence (PL) intensity of the 1.26-mu m In0.45Ga0.55As/GaAs QW is enhanced by a factor of 20 and the full width at half maximum value is reduced from 60.4 meV to 35.9 meV. The good crystalline quality is proved by temperature-dependent PL, which shows that the activation energies of In0.45Ga0.55As and Sb-assisted indium-graded In0.45Ga0.55As QWs are 20.87 meV and 27.09 meV. (c) 2005 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2009048	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	87	en_US
dc.citation.issue	6	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000231016900022	-
dc.citation.woscount	3	-
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