完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Meng, CC | en_US |
dc.contributor.author | Chen, CH | en_US |
dc.contributor.author | Chang, YW | en_US |
dc.contributor.author | Huang, GW | en_US |
dc.date.accessioned | 2014-12-08T15:18:38Z | - |
dc.date.available | 2014-12-08T15:18:38Z | - |
dc.date.issued | 2005-08-04 | en_US |
dc.identifier.issn | 0013-5194 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1049/el:20051955 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13407 | - |
dc.description.abstract | The first fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (VCO) using the stacked-transformer LC tank is demonstrated at 5.43-5.31 GHz with low-phase-noise performance. The stacked-transformers are formed by two interconnect metal layers and possess good electrical properties at high frequencies because of the semi-insulating GaAs substrate. The quadrature VCO at 5.38 GHz has phase noise of -127.4 dBc/Hz at 1 MHz offset frequency, output power of -4 dBm and a figure of merit (FOM) -191 dBc/Hz. | en_US |
dc.language.iso | en_US | en_US |
dc.title | 5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1049/el:20051955 | en_US |
dc.identifier.journal | ELECTRONICS LETTERS | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.issue | 16 | en_US |
dc.citation.spage | 906 | en_US |
dc.citation.epage | 908 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000233419900017 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |