標題: Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
作者: Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liao, Kuo-Hsiao
Syu, Yong-En
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: Mar-2016
摘要: To effectively lower the power consumption effect of Sn:SiO2 RRAM devices, the electrical hopping conduction mechanism for set/reset state was effectively used and achieved by different constant compliance current forming process. To assume and discuss the tin metal clustered reaction and electron transport behaviors in metallic filament path-forming model, the various electrical switching current and conduction mechanism model of the Sn:SiO2 RRAM devices for different constant compliance current were also investigated and described. Finally, the switching current relationship between hopping conduction energy and average inter-trap distance properties of the RRAM devices was also simulated and demonstrated in this study.
URI: http://dx.doi.org/10.1007/s00339-016-9768-5
http://hdl.handle.net/11536/134080
ISSN: 0947-8396
DOI: 10.1007/s00339-016-9768-5
期刊: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume: 122
Issue: 3
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