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dc.contributor.authorShih, Cheng Weien_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2017-04-21T06:55:33Z-
dc.date.available2017-04-21T06:55:33Z-
dc.date.issued2016-08-03en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.6b04332en_US
dc.identifier.urihttp://hdl.handle.net/11536/134096-
dc.description.abstractAt an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm(2)/V-s at 145 and 205 degrees C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45-205 degrees C than at 25 degrees C, which is due to the lower optical phonon scattering by the large SnO2 phonon energy. Moreover, the high on-current/off-current of 4 x 10(6) and the positive threshold voltage of 0.14 V at 25 degrees C are significantly better than those of a graphene transistor. This wide-band-gap SnO2 MOSFET exhibits high mobility in a 25-205 degrees C temperature range, a wide operating voltage of 1.5-20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications.en_US
dc.language.isoen_USen_US
dc.subjectfield-effect mobilityen_US
dc.subjecttransistoren_US
dc.subjectSnO2en_US
dc.subjecthigh temperatureen_US
dc.subjectwide energy band gapen_US
dc.titleNew Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductorsen_US
dc.identifier.doi10.1021/acsami.6b04332en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume8en_US
dc.citation.issue30en_US
dc.citation.spage19187en_US
dc.citation.epage19191en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380968300001en_US
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