完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shih, Cheng Wei | en_US |
dc.contributor.author | Chin, Albert | en_US |
dc.date.accessioned | 2017-04-21T06:55:33Z | - |
dc.date.available | 2017-04-21T06:55:33Z | - |
dc.date.issued | 2016-08-03 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/acsami.6b04332 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134096 | - |
dc.description.abstract | At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm(2)/V-s at 145 and 205 degrees C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45-205 degrees C than at 25 degrees C, which is due to the lower optical phonon scattering by the large SnO2 phonon energy. Moreover, the high on-current/off-current of 4 x 10(6) and the positive threshold voltage of 0.14 V at 25 degrees C are significantly better than those of a graphene transistor. This wide-band-gap SnO2 MOSFET exhibits high mobility in a 25-205 degrees C temperature range, a wide operating voltage of 1.5-20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | field-effect mobility | en_US |
dc.subject | transistor | en_US |
dc.subject | SnO2 | en_US |
dc.subject | high temperature | en_US |
dc.subject | wide energy band gap | en_US |
dc.title | New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors | en_US |
dc.identifier.doi | 10.1021/acsami.6b04332 | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 8 | en_US |
dc.citation.issue | 30 | en_US |
dc.citation.spage | 19187 | en_US |
dc.citation.epage | 19191 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000380968300001 | en_US |
顯示於類別: | 期刊論文 |