完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Quang Ho Luc | en_US |
dc.contributor.author | Cheng, Shou Po | en_US |
dc.contributor.author | Chang, Po Chun | en_US |
dc.contributor.author | Huy Binh Do | en_US |
dc.contributor.author | Chen, Jin Han | en_US |
dc.contributor.author | Minh Thien Huu Ha | en_US |
dc.contributor.author | Sa Hoang Huynh | en_US |
dc.contributor.author | Hu, Chenming Calvin | en_US |
dc.contributor.author | Lin, Yueh Chin | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2017-04-21T06:55:38Z | - |
dc.date.available | 2017-04-21T06:55:38Z | - |
dc.date.issued | 2016-08 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2016.2581175 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134117 | - |
dc.description.abstract | In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO2/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET). Excellent quality of gate dielectric is enabled by utilizing the PEALD-aluminum nitride as a pre-gate interfacial layer, followed by a post-gate remote-plasma gas treatment. In-situ PEALD treatment led to enhanced dc characteristics, such as drain current, peak transconductance, subthreshold swing, OFF leakage current, and effective electron mobility. X-ray photoelectron spectroscopy analysis indicates a reduction of In-and Ga-related signals. Furthermore, small drain current hysteresis and low-interface state density (D-it) value confirm a high interfacial quality for the high-k/III-V structure. Overall, the PEALD passivation for HfO2/In0.53Ga0.47As interface shows a remarkable improvement on the MOSFET performance. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | MOSFET | en_US |
dc.subject | MOSCAP | en_US |
dc.subject | AlN | en_US |
dc.subject | In0.53Ga0.47As | en_US |
dc.subject | plasma-enhanced atomic layer deposition | en_US |
dc.subject | remote-plasma treatment | en_US |
dc.title | Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors | en_US |
dc.identifier.doi | 10.1109/LED.2016.2581175 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 37 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 974 | en_US |
dc.citation.epage | 977 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000380330000007 | en_US |
顯示於類別: | 期刊論文 |