標題: | Impact of String Pattern on the Threshold-Voltage Spread of Program-Inhibited Cell in NAND Flash |
作者: | Chiu, Yung-Yueh Aoki, Minoru Yano, Masaru Shirota, Riichiro 電機工程學系 電信工程研究所 Department of Electrical and Computer Engineering Institute of Communications Engineering |
關鍵字: | NAND flash memory;program disturb;Fowler-Nordheim (FN) tunneling;hot-carrier injection (HCI) |
公開日期: | 1-七月-2016 |
摘要: | An anomalous threshold-voltage (V-t) spread of the program-inhibited cell is investigated for the first time in NAND flash memory. The program disturb characteristics are studied by applying the program-inhibited stress on the Nth cell of the unselected bitline with various string patterns for the 0th to (N - 1)th cell, using the global self-boosting method. Distinguishing features of the variance of the number of injected electrons (sigma(2)(n)) into the floating gate are observed. The variance is proportional to the mean value of injected electrons ((n) over bar) times 10. The other is proportional to (n) over bar times 20 and occurs only when the (N - 1) th cell is programmed in a high Vt level and the other cells are in the erased state. A 3-D TCAD simulation reveals that the former case is attributed to Fowler-Nordheim tunneling from the insufficiently boosting channel, and the latter is explained by hot-electron injection owing to the strong lateral electric field between the Nth and (N - 1) th cells. |
URI: | http://dx.doi.org/10.1109/JEDS.2016.2565820 http://hdl.handle.net/11536/134145 |
ISSN: | 2168-6734 |
DOI: | 10.1109/JEDS.2016.2565820 |
期刊: | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
Volume: | 4 |
Issue: | 4 |
起始頁: | 174 |
結束頁: | 178 |
顯示於類別: | 期刊論文 |