標題: | Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparent mu c-SiOx:H Doped Layers in mu c-Si:H and a-Si:H/mu c-Si:H Thin-Film Solar Cells |
作者: | Chen, Pei-Ling Chen, Po-Wei Hsiao, Min-Wen Hsu, Cheng-Hang Tsai, Chuang-Chuang 光電工程學系 Department of Photonics |
公開日期: | 1-一月-2016 |
摘要: | Theenhancement of optical absorption of silicon thin-film solar cells by the p-and n-type mu c-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties of mu c-SiOx:H films were also discussed. Regarding the doped mu c-SiOx:H films, the wide optical band gap (E-04) of 2.33 eV while maintaining a high conductivity of 0.2 S/cm could be obtained with oxygen incorporation of 20 at.%. Compared to the conventional mu c-Si:H(p) as window layer in mu c-Si:H single-junction solar cells, the application of mu c-SiOx:H(p) increased the V-OC and led to a significant enhancement in the short-wavelength spectral response. Meanwhile, the employment of mu c-SiOx:H(n) instead of conventional ITO as back reflecting layer (BRL) enhanced the external quantum efficiency (EQE) of mu c-Si:H single-junction cell in the long-wavelength region, leading to a relative efficiency gain of 10%. Compared to the reference cell, the optimized a-Si:H/mu c-Si:H tandem cell by applying p-and n-type mu c-SiOx:H films achieved a V-OC of 1.37V, J(SC) of 10.55 mA/cm(2), FF of 73.67%, and efficiency of 10.51%, which was a relative enhancement of 16%. |
URI: | http://dx.doi.org/10.1155/2016/8172518 http://hdl.handle.net/11536/134158 |
ISSN: | 1110-662X |
DOI: | 10.1155/2016/8172518 |
期刊: | INTERNATIONAL JOURNAL OF PHOTOENERGY |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |