標題: Development of Wider Bandgap n-type a-SiOx:H and mu c-SiOx:H as Both Doped and Intermediate Reflecting Layer for a-Si:H/a-Si1-xGex:H Tandem Solar Cells
作者: Chen, Po-Wei
Chen, Pei-Ling
Tsai, Chuang-Chuang
光電工程學系
Department of Photonics
關鍵字: a-SiOx:H(n);mu c-SiOx:H(n);mu c-SiOx:H(n);a-Si:H/a-Si1-x:H tandem cell;intermediate reflecting;back-reflecting layer
公開日期: 七月-2016
摘要: In this work, we developed a-SiOx:H(n) and mu c-SiOx:H(n) films as n-type layer, intermediate reflecting layer (IRL), and back-reflecting layer (BRL) to improve the light management in silicon thin-film solar cells. In the development of SiOx:H films, by properly adjusting the oxygen content of the films, the optical bandgap of x-SiOx:H(n) can be increased while maintaining sufficient conductivity. Similar effect was found for a-SiOx:H(n). In a-Si:H single junction cells, employing a-SiOx:H(n) as the replacement for a-Si:H(n) resulted in a relative efficiency enhancement of 11.4% due to the reduced parasitic absorption loss. We have also found that pc-SiOx:H(n) can replace back ITO layer as BRL, leading to a relative efficiency gain of 7.6%. For a-Si:H/a-Sil..,Ge.,:H tandem cell, employing pf-SiOx:H(n) as IRL increased the current density of top cell. In addition, employing a-SiOx:H(n) as a replacement of a-Si:H(n) in the top cell increased the current density of bottom cell due to the reduction of absorption loss. Combining all the improvements, the a-Si:H/a-Si1-xGex:H tandem cell with efficiency of 9.2%, V-oc = 1.58 V, J(SC) = 8.43 mA/cm(2), and FF = 68.4% was obtained.
URI: http://dx.doi.org/10.1007/s13391-016-4004-1
http://hdl.handle.net/11536/135693
ISSN: 1738-8090
DOI: 10.1007/s13391-016-4004-1
期刊: ELECTRONIC MATERIALS LETTERS
Volume: 12
Issue: 4
起始頁: 445
結束頁: 450
顯示於類別:會議論文