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dc.contributor.authorChen, Po-Weien_US
dc.contributor.authorChen, Pei-Lingen_US
dc.contributor.authorTsai, Chuang-Chuangen_US
dc.date.accessioned2017-04-21T06:50:16Z-
dc.date.available2017-04-21T06:50:16Z-
dc.date.issued2016-07en_US
dc.identifier.issn1738-8090en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s13391-016-4004-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/135693-
dc.description.abstractIn this work, we developed a-SiOx:H(n) and mu c-SiOx:H(n) films as n-type layer, intermediate reflecting layer (IRL), and back-reflecting layer (BRL) to improve the light management in silicon thin-film solar cells. In the development of SiOx:H films, by properly adjusting the oxygen content of the films, the optical bandgap of x-SiOx:H(n) can be increased while maintaining sufficient conductivity. Similar effect was found for a-SiOx:H(n). In a-Si:H single junction cells, employing a-SiOx:H(n) as the replacement for a-Si:H(n) resulted in a relative efficiency enhancement of 11.4% due to the reduced parasitic absorption loss. We have also found that pc-SiOx:H(n) can replace back ITO layer as BRL, leading to a relative efficiency gain of 7.6%. For a-Si:H/a-Sil..,Ge.,:H tandem cell, employing pf-SiOx:H(n) as IRL increased the current density of top cell. In addition, employing a-SiOx:H(n) as a replacement of a-Si:H(n) in the top cell increased the current density of bottom cell due to the reduction of absorption loss. Combining all the improvements, the a-Si:H/a-Si1-xGex:H tandem cell with efficiency of 9.2%, V-oc = 1.58 V, J(SC) = 8.43 mA/cm(2), and FF = 68.4% was obtained.en_US
dc.language.isoen_USen_US
dc.subjecta-SiOx:H(n)en_US
dc.subjectmu c-SiOx:H(n)en_US
dc.subjectmu c-SiOx:H(n)en_US
dc.subjecta-Si:H/a-Si1-x:H tandem cellen_US
dc.subjectintermediate reflectingen_US
dc.subjectback-reflecting layeren_US
dc.titleDevelopment of Wider Bandgap n-type a-SiOx:H and mu c-SiOx:H as Both Doped and Intermediate Reflecting Layer for a-Si:H/a-Si1-xGex:H Tandem Solar Cellsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1007/s13391-016-4004-1en_US
dc.identifier.journalELECTRONIC MATERIALS LETTERSen_US
dc.citation.volume12en_US
dc.citation.issue4en_US
dc.citation.spage445en_US
dc.citation.epage450en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000379226000005en_US
dc.citation.woscount0en_US
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