標題: | Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition |
作者: | Huynh, Sa Hoang Minh Thien Huu Ha Huy Binh Do Quang Ho Luc Yu, Hung Wei Chang, Edward Yi 材料科學與工程學系 電機學院 Department of Materials Science and Engineering College of Electrical and Computer Engineering |
公開日期: | 5-Sep-2016 |
摘要: | Highly lattice-mismatch (over 8%) ternary InxGa1-xSb alloy directly grown on GaAs substrates was demonstrated by metalorganic chemical vapor deposition (MOCVD). The influence of growth parameters, such as growth temperature, indium vapor composition, and V/III ratio, on the film properties was investigated, and it was found that the growth temperature has the strongest effect on the surface morphology and the crystal quality of the InxGa1-xSb epilayer. An optimized growth temperature of similar to 590 degrees C and a V/III ratio of 2.5 were used for the growth of the InxGa1-xSb epilayer on GaAs that displays a lower surface roughness. High-resolution transmission electron microscopy micrographs exhibit that InxGa1-xSb epilayer growth on GaAs was governed by the interfacial misfit dislocation growth mode. Furthermore, the variation of the intermixing layer thickness at the InxGa1-xSb/GaAs heterointerface was observed. These results provide an information of growing highly lattice-mismatched epitaxial material systems by MOCVD growth process. Published by AIP Publishing. |
URI: | http://dx.doi.org/10.1063/1.4962640 http://hdl.handle.net/11536/134243 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4962640 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 109 |
Issue: | 10 |
起始頁: | 109 |
結束頁: | 112 |
Appears in Collections: | Articles |