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dc.contributor.authorKuo, Chien-Tingen_US
dc.contributor.authorHsu, Lung-Hsingen_US
dc.contributor.authorHuang, Bo-Hsinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.date.accessioned2017-04-21T06:55:19Z-
dc.date.available2017-04-21T06:55:19Z-
dc.date.issued2016-09en_US
dc.identifier.issn1559-128Xen_US
dc.identifier.urihttp://dx.doi.org/10.1364/AO.55.007387en_US
dc.identifier.urihttp://hdl.handle.net/11536/134260-
dc.description.abstractThe influence of the microstructure geometry of patterned sapphire substrates (PSS) on the light extraction efficiency (LEE) of GaN light-emitting diodes (LEDs) is numerically analyzed. Cone structures of various dimensions are studied, along with dome and mixed microstructures. LEE is found to mainly depend on the microstructure surface slope. LEE rises quickly with slope and flattens out when the slope exceeds 0.6. Scaling down the microstructure has little effect on LEE. Light rays are found to travel longer distances in PSS LEDs, as compared with LEDs grown on a flat substrate. Keeping GaN absorption loss low is important for LEE optimization. (C) 2016 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleInfluence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDsen_US
dc.identifier.doi10.1364/AO.55.007387en_US
dc.identifier.journalAPPLIED OPTICSen_US
dc.citation.volume55en_US
dc.citation.issue26en_US
dc.citation.spage7387en_US
dc.citation.epage7391en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000383996000027en_US
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