Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

Abstract

Accurate determination of the flat band voltage (V-FB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine V-FB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted V-FB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.