Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials

doi:10.1109/LED.2016.2594802

Title:	Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
Authors:	Huy Binh Do Quang Ho Luc Minh Thien Huu Ha Sa Hoang Huynh Hu, Chenming Lin, Yueh Chin Chang, Edward Yi 材料科學與工程學系電機學院 Department of Materials Science and Engineering College of Electrical and Computer Engineering
Keywords:	High mobility III-V semiconductor;flat band voltage;interface trap density;C-V hysteresis;effective work function
Issue Date:	Sep-2016
Abstract:	Accurate determination of the flat band voltage (V-FB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine V-FB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted V-FB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.
URI:	http://dx.doi.org/10.1109/LED.2016.2594802 http://hdl.handle.net/11536/134262
ISSN:	0741-3106
DOI:	10.1109/LED.2016.2594802
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	37
Issue:	9
Begin Page:	1100
End Page:	1103
Appears in Collections:	Articles