標題: | Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride |
作者: | Liao, Chan-Yu Lin, Hsiao-Chun Wang, Chao-Lung Lee, I-Che Chou, Chia-Hsin Li, Yu-Ren Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Excimer laser crystallization (ELC);light absorption layer;single-crystal-like;polycrystalline silicon (poly-Si);thin-film transistor (TFT) |
公開日期: | 九月-2016 |
摘要: | High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm(2)/V-s, with only minor deviation. |
URI: | http://dx.doi.org/10.1109/LED.2016.2588735 http://hdl.handle.net/11536/134263 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2016.2588735 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 37 |
Issue: | 9 |
起始頁: | 1135 |
結束頁: | 1138 |
顯示於類別: | 期刊論文 |