標題: Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride
作者: Liao, Chan-Yu
Lin, Hsiao-Chun
Wang, Chao-Lung
Lee, I-Che
Chou, Chia-Hsin
Li, Yu-Ren
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Excimer laser crystallization (ELC);light absorption layer;single-crystal-like;polycrystalline silicon (poly-Si);thin-film transistor (TFT)
公開日期: 九月-2016
摘要: High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm(2)/V-s, with only minor deviation.
URI: http://dx.doi.org/10.1109/LED.2016.2588735
http://hdl.handle.net/11536/134263
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2588735
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 37
Issue: 9
起始頁: 1135
結束頁: 1138
顯示於類別:期刊論文