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dc.contributor.authorLai, FIen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorTsai, MYen_US
dc.contributor.authorChu, CPen_US
dc.contributor.authorKuo, SYen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorTansu, Nen_US
dc.contributor.authorYeh, JYen_US
dc.contributor.authorMawst, LJen_US
dc.date.accessioned2014-12-08T15:18:41Z-
dc.date.available2014-12-08T15:18:41Z-
dc.date.issued2005-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.6204en_US
dc.identifier.urihttp://hdl.handle.net/11536/13426-
dc.description.abstractThe effects of nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs single quantum wells (SQWs), where x = 0.5 and 2%, grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) were investigated using photoluminescence (PL) and high-resolution transmission electron microscopy (HRTEM). The evolution of the excitation-dependent PL and PL-peak position with temperature between 10 and 300 K shows that quantum-dot-like states occurred at that high nitrogen incorporation (x = 2%) and were confirmed by an HRTEM image which showed small dark regions about 2 - 3 nm in size was found in the interface of In(0.4)Ga(0.6)As(0.98)N(0.02) and GaAs. Our investigations indicate that high nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs system influenced carrier localization and might cause the formation of the dot-like states.en_US
dc.language.isoen_USen_US
dc.subjectInGaAsNen_US
dc.subject1.3 mu men_US
dc.subjectVCSELen_US
dc.subjectquantum-dot-like stateen_US
dc.subjectstrain compensationen_US
dc.titleTemperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.6204en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue8en_US
dc.citation.spage6204en_US
dc.citation.epage6207en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000232029500066-
dc.citation.woscount4-
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