標題: High-Performance Low-Temperature p-Channel Polycrystalline-Germanium Thin-Film Transistors via Continuous Wave Laser Crystallization
作者: Wu, Chun-Vi
Li, Yi-Shao
Chou, Chia-Hsin
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: The continuous wave laser crystallization (CLC) has been considered as a suitable approach to achieve the high-quality Ge films. In order to further overcome the hole concentration of Ge thin films resulting from the acceptor-like defects, the counter-doping (CD) process with a suitable dose of n-type dopants was employed to convert the carrier type in Ge thin films. In this study, the high-performance low-temperature p-channel polycrystalline-germanium thin-film transistors (TFTs) have been demonstrated via continuous wave laser crystallization and counter doping to exhibit the low subthreshold swing of 432 mV/decade, a superior on/off current ratio of 4x10(3) and a high hole field-effect mobility of 290 cm(2)/V-s.
URI: http://hdl.handle.net/11536/134347
ISBN: 978-4-9908753-1-2
期刊: 2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)
起始頁: 119
結束頁: 122
Appears in Collections:Conferences Paper