Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chin, Albert | en_US |
dc.contributor.author | Shih, Cheng Wei | en_US |
dc.contributor.author | Lu, Chun Fu | en_US |
dc.contributor.author | Su, Wei Fang | en_US |
dc.date.accessioned | 2017-04-21T06:50:13Z | - |
dc.date.available | 2017-04-21T06:50:13Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-4-9908753-1-2 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134350 | - |
dc.description.abstract | Very high mobility of 149 +/- 189 cm(2)/Vs, large on-to-off current ratio (I-ON/I-OFF) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2 similar to 2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility is already 0.7 times of universal mobility of SiO2/Si nMOSFET, operated typically at >= 1 MV/cm field. The very high mobility, simple low temperature process, and ultra-thin body SnO2 transistor should find its crucial role for high resolution display, future sub-10 nm nMOSFET and brain-mimicking 3D IC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High Mobility SnO2 TFT for Display and Future IC | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | en_US |
dc.citation.spage | 294 | en_US |
dc.citation.epage | 297 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000389600900095 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |