Title: Influence of plasma fluorination on p-type channel tin-oxide thin film transistors
Authors: Chen, Po-Chun
Chiu, Yu-Chien
Zheng, Zhi-Wei
Cheng, Chun-Hu
Wu, Yung-Hsien
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Thin film transistor (TFT);Tin-oxide (SnO);p-type;Plasma fluorination
Issue Date: 15-Jun-2017
Abstract: This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6 x 10(6), a field-effect mobility of 2.13 cm(2) V-1 s(-1), a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of <3 V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications. (C) 2016 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2016.11.294
http://hdl.handle.net/11536/145467
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2016.11.294
Journal: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 707
Begin Page: 162
End Page: 166
Appears in Collections:Articles