標題: | Influence of plasma fluorination on p-type channel tin-oxide thin film transistors |
作者: | Chen, Po-Chun Chiu, Yu-Chien Zheng, Zhi-Wei Cheng, Chun-Hu Wu, Yung-Hsien 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Thin film transistor (TFT);Tin-oxide (SnO);p-type;Plasma fluorination |
公開日期: | 15-Jun-2017 |
摘要: | This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6 x 10(6), a field-effect mobility of 2.13 cm(2) V-1 s(-1), a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of <3 V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications. (C) 2016 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jallcom.2016.11.294 http://hdl.handle.net/11536/145467 |
ISSN: | 0925-8388 |
DOI: | 10.1016/j.jallcom.2016.11.294 |
期刊: | JOURNAL OF ALLOYS AND COMPOUNDS |
Volume: | 707 |
起始頁: | 162 |
結束頁: | 166 |
Appears in Collections: | Articles |