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dc.contributor.authorCheng, TYen_US
dc.contributor.authorHsieh, CCen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorHsu, CHen_US
dc.date.accessioned2014-12-08T15:18:41Z-
dc.date.available2014-12-08T15:18:41Z-
dc.date.issued2005-08-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physb.2005.05.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/13435-
dc.description.abstractSingle-phase La0.7Sn0.3MnO3 (LSnMO) thin films were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition (PLD). The as-deposited films, though were insulating with no sign of insulator-metal transition (IMT), did display paramagnetic-ferromagnetic transition (PFT) around 150 K. Ex situ annealing of the films at 850 degrees C in 250 Torr oxygen for 4 h, nonetheless, not only significantly improves the crystallographic quality but also raises IMT and PFT at 315K and 320K, respectively. The manifestations of spin-glass-like behavior in both the as-deposited and postannealed films suggest that it could be intrinsic LSnMO, albeit transport properties can be drastically changed by the strain originating from large ion-size misfit between Sn and La and film/substrate epitaxial relation. The preliminary X-ray absorption spectroscopy shows signature of Mn3+/Mn2+ mixed-valence indicating that tetravalent Sn ions does result in electron-doping into the e, band of Mn. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectstrain relaxationen_US
dc.subjectspin glassen_US
dc.subjectmagnetoresistanceen_US
dc.titleThe magneto-transport properties of epitaxial La0.7Sn0.3MnO3 manganite thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physb.2005.05.007en_US
dc.identifier.journalPHYSICA B-CONDENSED MATTERen_US
dc.citation.volume365en_US
dc.citation.issue1-4en_US
dc.citation.spage141en_US
dc.citation.epage146en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000231045700018-
dc.citation.woscount2-
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