完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Cheng, TY | en_US |
dc.contributor.author | Hsieh, CC | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.contributor.author | Hsu, CH | en_US |
dc.date.accessioned | 2014-12-08T15:18:41Z | - |
dc.date.available | 2014-12-08T15:18:41Z | - |
dc.date.issued | 2005-08-01 | en_US |
dc.identifier.issn | 0921-4526 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.physb.2005.05.007 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13435 | - |
dc.description.abstract | Single-phase La0.7Sn0.3MnO3 (LSnMO) thin films were fabricated on SrTiO3 (STO) substrates by pulsed laser deposition (PLD). The as-deposited films, though were insulating with no sign of insulator-metal transition (IMT), did display paramagnetic-ferromagnetic transition (PFT) around 150 K. Ex situ annealing of the films at 850 degrees C in 250 Torr oxygen for 4 h, nonetheless, not only significantly improves the crystallographic quality but also raises IMT and PFT at 315K and 320K, respectively. The manifestations of spin-glass-like behavior in both the as-deposited and postannealed films suggest that it could be intrinsic LSnMO, albeit transport properties can be drastically changed by the strain originating from large ion-size misfit between Sn and La and film/substrate epitaxial relation. The preliminary X-ray absorption spectroscopy shows signature of Mn3+/Mn2+ mixed-valence indicating that tetravalent Sn ions does result in electron-doping into the e, band of Mn. (c) 2005 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | strain relaxation | en_US |
dc.subject | spin glass | en_US |
dc.subject | magnetoresistance | en_US |
dc.title | The magneto-transport properties of epitaxial La0.7Sn0.3MnO3 manganite thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.physb.2005.05.007 | en_US |
dc.identifier.journal | PHYSICA B-CONDENSED MATTER | en_US |
dc.citation.volume | 365 | en_US |
dc.citation.issue | 1-4 | en_US |
dc.citation.spage | 141 | en_US |
dc.citation.epage | 146 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000231045700018 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |