標題: E-Band RF-to-DC Converter Using Schottky Diode in 0.18-mu m CMOS Technology
作者: Chang, Wei-Ling
Meng, Chinchun
Fu, Tzu-Chien
Huang, Guo-Wei
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: CMOS;Schottky-barrier diode;millimeter-wave;RF-to-DC converter
公開日期: 2016
摘要: This paper demonstrates a millimeter-wave RF-to-DC converter based on Schottky-barrier diodes using 0.18-mu m CMOS technology. The Schottky-barrier diode has a cutoff frequency of 400 GHz and a low turn-on voltage of 0.3 V. In the RF-to-DC quadrupler, the difference in turn-on voltages between the Schottky-barrier diode and n-well to p-substrate parasitic pn junction prevents the pn junction from turning on with an effect similar to the Schottky diode clamp in Schottky TTL circuits. The input matching has a better than 10 dB return loss from 50 GHz to 100 GHz. The RF-to-DC quadrupler generates a 3.15 V DC voltage at 84 GHz.
URI: http://hdl.handle.net/11536/134377
ISBN: 978-1-5090-0698-4
ISSN: 0149-645X
期刊: 2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
Appears in Collections:Conferences Paper