Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

Abstract

We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 mu m range. The epitaxial structures were grown on (10 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0-0.02. The long-wavelength (up to 1.3 mu m) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In(0.36)Ga(0.64)N(0.006)AS(0.994)/GaAs VCSELs. A very low J(th) of 2.55 kA cm(-2) was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 mu m In0.35Ga0.65N0.02As0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A J(th) of 1.52 kA cm-2 has been obtained for the MBE-grown In0.35Ga0.65N0.02As0.98/GaAs VCSELs, which is the lowest threshold current density reported. The emission characteristics of the InGaNAs/GaAs VCSELs were measured and analysed.