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dc.contributor.authorLee, CYen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorLi, SYen_US
dc.contributor.authorLin, Pen_US
dc.date.accessioned2014-12-08T15:18:42Z-
dc.date.available2014-12-08T15:18:42Z-
dc.date.issued2005-08-01en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/16/8/019en_US
dc.identifier.urihttp://hdl.handle.net/11536/13448-
dc.description.abstractSingle-crystalline Mg-x-Zn1-xO(0 <= x <= 0.25) nanowires (MZONWs) were synthesized on glass substrates by a hydrothermal method using a mixture of an aqueous solution of zinc nitrate hexahydrate, magnesium nitrate hexahydrate and diethylenetriamine at temperatures that ranged from 75 to 105 degrees C. X-ray diffraction, scanning electron microscopy and transmission electron microscopy investigations were carried out to characterize the crystallinity, surface morphologies and orientations of these nanowires, respectively. These nanowires with direct band gaps ranging from 3.21 to 3.95 eV emitted ultraviolet photoluminescence from 406 to 397 nm at room temperature as the Mg content increased. Field emission measurements revealed that the turn-on electric field and threshold electric field (current density of 1 mA cm(-2)) of ZnO NWs are 1.6 and 2.1 V mu m(-1) with the value of 3340. Therefore, low temperature synthesized MZO NWs (0 <= x <= 0.25) with modulated band gaps may be applied in solar cells, light emission devices and other nanoheterojunction devices in the future.en_US
dc.language.isoen_USen_US
dc.titleSingle-crystalline MgxZn1-xO (0 <= x <= 0.25) nanowires on glass substrates obtained by a hydrothermal method: growth, structure and electrical characteristicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/16/8/019en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume16en_US
dc.citation.issue8en_US
dc.citation.spage1105en_US
dc.citation.epage1111en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000231410600019-
dc.citation.woscount20-
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