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dc.contributor.authorChau, Frank Hin-Faien_US
dc.contributor.authorLin, Barry Jia-Fuen_US
dc.contributor.authorChen, Yanen_US
dc.contributor.authorKretschmar, Marken_US
dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorWang, Nan-lei Larryen_US
dc.contributor.authorSun, Xiaopengen_US
dc.contributor.authorMa, Wenlongen_US
dc.contributor.authorXu, Sarahen_US
dc.contributor.authorHu, Peteren_US
dc.date.accessioned2017-04-21T06:49:39Z-
dc.date.available2017-04-21T06:49:39Z-
dc.date.issued2006en_US
dc.identifier.isbn978-1-4244-0126-0en_US
dc.identifier.issn1550-8781en_US
dc.identifier.urihttp://hdl.handle.net/11536/134494-
dc.description.abstractThis paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm(2) current density and 310 degrees C junction temperature resulted in zero device failures after over 3600 hours of stress. Wafer-level reliability tests using extreme current stress conditions were used to force transistors to degrade in short time for quick checking of transistor integrity and process reliability. Transistor lifetimes were generally higher than those in conventional low voltage HBTs at similar junction temperatures. Combining with the previously reported ruggedness and linearity performance, the high voltage InGaP/GaAs HBT is a mature technology for use in the 28V high linearity power amplification.en_US
dc.language.isoen_USen_US
dc.subjectInGaPHBTen_US
dc.subjecthigh voltage HBTen_US
dc.subjectHBT reliabilityen_US
dc.subjectwafer-level reliabilityen_US
dc.titleReliability study of InGaP/GaAs HBT for 28V operationen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006en_US
dc.citation.spage191en_US
dc.citation.epage194en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000244612000043en_US
dc.citation.woscount3en_US
Appears in Collections:Conferences Paper