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dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorHsiao, Yu-Chihen_US
dc.date.accessioned2017-04-21T06:49:25Z-
dc.date.available2017-04-21T06:49:25Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1235-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/134531-
dc.description.abstractAnalytical formulas of noise parameters for inductively source-degenerated LNAs in single-/dual-band configurations were derived using noise transformation matrix recently. In the past, the design optimization of a single-band LNA was achieved by solving the noise equation explicitly in a tedious way. However, it is difficult to optimize LNAs of other configurations such as dual-band, multi-band and broadband topologies because it becomes formidable to solve the noise equation explicitly. Our recent research shows that the noise equation of an LNA can be solved implicitly using noise transformation matrix and an insightful design optimization of a dual-band LNA is thus obtained. The paper reviews all the previous work of single-band LNAs done by others in the literature and then concludes with our experimental results of a dual-band LNA with the balanced noise performance.en_US
dc.language.isoen_USen_US
dc.subjectinductively source-degenerated low-noise amplifieren_US
dc.subjectfield effect transistoren_US
dc.titleDesign Optimization of Inductively Source-Degenerated FET LNAs Using Noise Transformation Matrix (Invited Talk)en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT)en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000392495700094en_US
dc.citation.woscount0en_US
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