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dc.contributor.authorRieh, Jae-Sungen_US
dc.contributor.authorYoon, Daekeunen_US
dc.contributor.authorYun, Jongwonen_US
dc.contributor.authorSong, Kiryongen_US
dc.contributor.authorKim, Jungsooen_US
dc.contributor.authorKim, Sooyeonen_US
dc.contributor.authorYoo, Junghwanen_US
dc.contributor.authorKaynak, Mehmeten_US
dc.contributor.authorTillack, Bernden_US
dc.date.accessioned2017-04-21T06:49:25Z-
dc.date.available2017-04-21T06:49:25Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1235-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/134532-
dc.description.abstractA comparison is made on high-frequency SiGe imagers to investigate the performance enhancement with circuit-level approaches: employing a front-end low noise amplifier (LNA) and employing heterodyne topology. Two imagers operating near 130 GHz, one with and the other without an LNA, were compared for the responsivity and the noise equivalent power (NEP). Also, two imagers operating near 300 GHz, one in direct and the other in heterodyne topology, were compared for the same parameters. Inserting a front-end LNA has led to changes in the peak responsivity and the minimum NEP with a factor of 63.5 and 0.011, respectively, near 130 GHz. Employing heterodyne topology for the 300 GHz imager resulted in changes with a factor of 52.8 and 0.18 for the same parameters.en_US
dc.language.isoen_USen_US
dc.subjectimagingen_US
dc.subjectheterojunction bipolar transistorsen_US
dc.subjectsilicon germaniumen_US
dc.subjectterahertzen_US
dc.subjectreceiversen_US
dc.titleApproaches to Enhance the Performance of SiGe Imagers Operating near 130 GHz and 300 GHzen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT)en_US
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000392495700050en_US
dc.citation.woscount0en_US
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