A 290-GHz CMOS Heterodyne Integrated Imager

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DC 欄位	值	語言
dc.contributor.author	Yoon, Daekeun	en_US
dc.contributor.author	Kim, Jungsoo	en_US
dc.contributor.author	Rieh, Jae-Sung	en_US
dc.date.accessioned	2017-04-21T06:49:25Z	-
dc.date.available	2017-04-21T06:49:25Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-1235-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134534	-
dc.description.abstract	A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz(1/2) were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.	en_US
dc.language.iso	en_US	en_US
dc.subject	CMOS	en_US
dc.subject	CMOS integrated circuit	en_US
dc.subject	imaging	en_US
dc.subject	receivers	en_US
dc.title	A 290-GHz CMOS Heterodyne Integrated Imager	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT)	en_US
dc.contributor.department	國際半導體學院	zh_TW
dc.contributor.department	International College of Semiconductor Technology	en_US
dc.identifier.wosnumber	WOS:000392495700028	en_US
dc.citation.woscount	0	en_US
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