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dc.contributor.authorYu, Chang-Hungen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.date.accessioned2017-04-21T06:49:25Z-
dc.date.available2017-04-21T06:49:25Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-4391-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/134536-
dc.language.isoen_USen_US
dc.titleStability Optimization of Monolithic 3-D MoS2-n/WSe2-p SRAM Cells for Superthreshold and Near-/Sub-threshold Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000392693000027en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper