Stability Optimization of Monolithic 3-D MoS2-n/WSe2-p SRAM Cells for Superthreshold and Near-/Sub-threshold Applications

Full metadata record

DC Field	Value	Language
dc.contributor.author	Yu, Chang-Hung	en_US
dc.contributor.author	Su, Pin	en_US
dc.contributor.author	Chuang, Ching-Te	en_US
dc.date.accessioned	2017-04-21T06:49:25Z	-
dc.date.available	2017-04-21T06:49:25Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-4391-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134536	-
dc.language.iso	en_US	en_US
dc.title	Stability Optimization of Monolithic 3-D MoS2-n/WSe2-p SRAM Cells for Superthreshold and Near-/Sub-threshold Applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000392693000027	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper