Fabrication of nitride LEDs using chemical lift-off from a GaN/sapphire template

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DC Field	Value	Language
dc.contributor.author	Horng, Ray-Hua	en_US
dc.contributor.author	Hsueh, Hsu-Hung	en_US
dc.contributor.author	Ou, Sin-Liang	en_US
dc.contributor.author	Wuu, Dong-Sing	en_US
dc.date.accessioned	2017-04-21T06:49:24Z	-
dc.date.available	2017-04-21T06:49:24Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-1964-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134545	-
dc.language.iso	en_US	en_US
dc.title	Fabrication of nitride LEDs using chemical lift-off from a GaN/sapphire template	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000392285400072	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper