| Title: | The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates |
| Authors: | Hsu, Heng-Tung Lin, Yueh-Chin Huang, Lu-Che Chang, Chia-Hua Hsieh, Ting-En Itoh, Yasushi Chang, Edward Yi 材料科學與工程學系 國際半導體學院 Department of Materials Science and Engineering International College of Semiconductor Technology |
| Issue Date: | 2016 |
| URI: | http://hdl.handle.net/11536/134547 |
| ISBN: | 978-1-5090-1964-9 |
| Journal: | 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) |
| Appears in Collections: | Conferences Paper |
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- 以傾斜型閘極改善氮化鋁鎵/氮化鎵高電子遷移率電晶體之崩潰電壓及可靠性 / 張育維;張翼;馬哲申
- Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices / Chiang, Che-Yang;Hsu, Heng-Tung;Chang, Edward Yi
- 以深紫外光微影製作具傾斜型電場板之氮化鋁鎵/氮化鎵高電子遷移率電晶體 / 黃祿哲;Huang, Lu-Che;張翼;Chang, Yi Edward
- Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band / Chang, Chia-Hua;Hsu, Heng-Tung;Huang, Lu-Che;Chiang, Che-Yang;Chang, Edward Yi
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