Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kaji, R. | en_US |
dc.contributor.author | Tominaga, T. | en_US |
dc.contributor.author | Wu, Y. -N. | en_US |
dc.contributor.author | Wu, M. -F. | en_US |
dc.contributor.author | Cheng, S. -J. | en_US |
dc.contributor.author | Adachi, S. | en_US |
dc.date.accessioned | 2017-04-21T06:49:23Z | - |
dc.date.available | 2017-04-21T06:49:23Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-5090-1964-9 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134548 | - |
dc.description.abstract | We investigated the electron and hole g-factors in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically around the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | g-factors | en_US |
dc.subject | hole | en_US |
dc.subject | quantum structures | en_US |
dc.subject | InAs | en_US |
dc.title | Hole g-Factor Anisotropies in Individual InAs Quantum Rings | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000392285400286 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |