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dc.contributor.authorKaji, R.en_US
dc.contributor.authorTominaga, T.en_US
dc.contributor.authorWu, Y. -N.en_US
dc.contributor.authorWu, M. -F.en_US
dc.contributor.authorCheng, S. -J.en_US
dc.contributor.authorAdachi, S.en_US
dc.date.accessioned2017-04-21T06:49:23Z-
dc.date.available2017-04-21T06:49:23Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1964-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/134548-
dc.description.abstractWe investigated the electron and hole g-factors in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically around the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.en_US
dc.language.isoen_USen_US
dc.subjectg-factorsen_US
dc.subjectholeen_US
dc.subjectquantum structuresen_US
dc.subjectInAsen_US
dc.titleHole g-Factor Anisotropies in Individual InAs Quantum Ringsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000392285400286en_US
dc.citation.woscount0en_US
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