Evaluation of GaN HEMT with Field Plate for Reliability Improvement

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Y. C.	en_US
dc.contributor.author	Lin, J. C.	en_US
dc.contributor.author	Lin, Y.	en_US
dc.contributor.author	Wu, C. H.	en_US
dc.contributor.author	Chin, P. C.	en_US
dc.contributor.author	Hsu, H. T.	en_US
dc.contributor.author	Hsieh, T. E.	en_US
dc.contributor.author	Iwai, H.	en_US
dc.contributor.author	Chang, E. Y.	en_US
dc.date.accessioned	2017-04-21T06:49:22Z	-
dc.date.available	2017-04-21T06:49:22Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-1964-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134549	-
dc.language.iso	en_US	en_US
dc.title	Evaluation of GaN HEMT with Field Plate for Reliability Improvement	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	國際半導體學院	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	International College of Semiconductor Technology	en_US
dc.identifier.wosnumber	WOS:000392285400097	en_US
dc.citation.woscount	0	en_US
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