Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator

標題:	Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
作者:	Lin, Y. C. Lin, J. C. Lin, Y. Wu, C. H. Huang, Y. X. Liu, S. C. Hsu, H. T. Hsieh, T. E. Kakushima, K. Iwai, H. Chang, E. Y. 材料科學與工程學系國際半導體學院 Department of Materials Science and Engineering International College of Semiconductor Technology
公開日期:	2016
URI:	http://hdl.handle.net/11536/134550
ISBN:	978-1-5090-1964-9
期刊:	2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
顯示於類別：	會議論文