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dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorLin, J. C.en_US
dc.contributor.authorLin, Y.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorHuang, Y. X.en_US
dc.contributor.authorLiu, S. C.en_US
dc.contributor.authorHsu, H. T.en_US
dc.contributor.authorHsieh, T. E.en_US
dc.contributor.authorKakushima, K.en_US
dc.contributor.authorIwai, H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.date.accessioned2017-04-21T06:49:22Z-
dc.date.available2017-04-21T06:49:22Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1964-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/134550-
dc.language.isoen_USen_US
dc.titleEnhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulatoren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000392285400094en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper