Impact of Nanoscale Polarization Relaxation on Endurance Reliability of One-Transistor Hybrid Memory Using Combined Storage Mechanisms

Abstract

We demonstrate a novel hybrid nonvolatile memory integrated with a charge trapping mechanism and a ferroelectric polarization effect. The hybrid memory features a large threshold voltage window of 2V, fast 20-ns program/erase time, tight switching margin, and long 10(12)-cycling endurance at 85 degrees C. Such excellent endurance reliability at 85 degrees C can be ascribed to the introduction of charge-trapping node into the design of memory structure that not only weakens temperature-dependent polarization relaxation, but also improves high-temperature endurance reliability.