標題: Improvement of Oxide Reliability in NAND Flash Memories Using Tight Endurance Cycling with Shorter Idling Period
作者: Shirota, R.
Yang, B-J.
Chiu, Y-Y.
Wu, Y-T.
Wang, P-Y.
Chang, J-H.
Yano, M.
Aoki, M.
Takeshita, T.
Wang, C-Y.
Kurachi, I.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: component;NAND Flash;reliability;FN-tunneling;endurance;retention
公開日期: 2015
摘要: It has been newly found that shorter intervals between program and erase operations can suppress the oxide degradation more significantly in a 0.05 to 5 sec timeframe. Our new analysis clearly demonstrates the following degradation phenomena: a longer interval yields more trapped charges near the Si surface and surface states. Our results also indicate that the oxide degradation occurs more significantly during the erase-to-program interval than in the program-to-erase interval. These findings suggest that the erasing step causes a self-induced positive FG potential yields an accumulation of trapped holes near the Si surface and also generates surface states during the interval from erase-to-program. In addition, regarding retention characteristics, larger Vt shifts caused by the reduction of surface states and electron detrapping of oxide charges are observed in the longer interval. Based on these results, a new NAND operation scheme is proposed to improve reliability in shorter intervals.
URI: http://hdl.handle.net/11536/134601
ISBN: 978-1-4673-7362-3
ISSN: 1541-7026
期刊: 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
Appears in Collections:Conferences Paper