Site-controlled crystalline growth of InN on GaN substrate and its photoluminscence

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DC 欄位	值	語言
dc.contributor.author	Kuo, Chien-Ting	en_US
dc.contributor.author	Hsu, Lung-Hsing	en_US
dc.contributor.author	Lai, Yung-Yu	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.date.accessioned	2017-04-21T06:49:16Z	-
dc.date.available	2017-04-21T06:49:16Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-9435-8011-8	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134621	-
dc.description.abstract	We report a site-controlled growth of InN on a GaN substrate. Crystalline InN micropillars were selectively grown from the hexagonal V-pits on GaN surface. The grown mechanism and photoluminescent property will be discussed.	en_US
dc.language.iso	en_US	en_US
dc.title	Site-controlled crystalline growth of InN on GaN substrate and its photoluminscence	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000391286401323	en_US
dc.citation.woscount	0	en_US
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