High Performance Silicon N-channel Gate-All-Around Junctionless Field Effect Transistors by Strain Technology

Title:	High Performance Silicon N-channel Gate-All-Around Junctionless Field Effect Transistors by Strain Technology
Authors:	Sung, P. -J. Cho, T. -C. Chen, P. -C. Hou, F. -J. Lai, C. -H Lee, Y. -J. Li, Y. Samukawa, S. Chao, T. -S. Wu, W. -F. Yeh, W. -K. 電子物理學系電機工程學系 Department of Electrophysics Department of Electrical and Computer Engineering
Issue Date:	2016
Abstract:	In this paper, strain effects on silicon n-channel gate-allaround (GAA) jucntionless field effect transistor (JLFET) are studied. By using tensile strain SiN layer, drive currents of the JLFETs show enhancement of up to 42%. The high performance strained JLFETs exhibit superior gate control (I-on/I-off > 10(9)) and ideal S.S. (65 mV/dec.) as a channel width scales down to 20 nm. Drive currents and leakage currents are improved simultaneously after inducing strain technology.
URI:	http://hdl.handle.net/11536/134637
ISBN:	978-1-5090-1493-4
Journal:	2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
Begin Page:	174
End Page:	175
Appears in Collections:	Conferences Paper