標題: | Performance Comparison Between Bulk and SOI Junctionless Transistors |
作者: | Han, Ming-Hung Chang, Chun-Yen Chen, Hung-Bin Wu, Jia-Jiun Cheng, Ya-Chi Wu, Yung-Chun 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Fin-shaped field-effect transistor (FinFET);junctionless (JL);3-D simulation |
公開日期: | 1-二月-2013 |
摘要: | The design and characteristics of a junctionless (JL) bulk FinFET were compared with the silicon-on-insulator (SOI) JL nanowire transistor (JNT) using 3-D quantum transport device simulation. The JL bulk FinFET exhibits a favorable ON/OFF current ratio and short-channel characteristics by reducing the effective channel thickness that is caused by the channel/substrate junction. The drain-induced barrier lowering and the subthreshold slope are about 40 mV and 73 mV/dec, respectively, with an ON/OFF current ratio of 10(5) at W = 10 nm. The JL bulk FinFET is less sensitive to the channel thickness than the SOI JNT. Furthermore, the threshold voltage V-th of the JL bulk FinFET can be easily tuned by varying substrate doping concentration N-sub. The modulation range of V-th as N-sub changes from 10(18) to 10(19) cm(-3), which is around 30%. |
URI: | http://dx.doi.org/10.1109/LED.2012.2231395 http://hdl.handle.net/11536/21020 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2012.2231395 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 2 |
起始頁: | 169 |
結束頁: | 171 |
顯示於類別: | 期刊論文 |