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dc.contributor.authorWu, Chien-Hungen_US
dc.contributor.authorHuang, Bo-Wenen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorCheng, Chia-Yaoen_US
dc.contributor.authorChen, Hsin-Yingen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorLin, Jian-Hongen_US
dc.contributor.authorHsu, Jui-Meien_US
dc.date.accessioned2017-04-21T06:48:50Z-
dc.date.available2017-04-21T06:48:50Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1493-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/134638-
dc.description.abstractIn this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA with 300W for 100sec treatment on AP-IGZO TFTs have been fabricated successfully and show excellent electrical characteristics including a VTH of -1.23 V, SS of 0.18 V/dec, mu FE of 17.4 cm2/V-s, and Ion/Ioff ratio of 8.14 106. Stretched exponential time dependence model is used to analyze the mechanism of AP-IGZO TFTs under PBTI stress. Accordingly, chemisorption model for oxygen adsorption at AP-IGZO backchannel with and without MWAA is proposed to explain the mechanism under PBTI stress.en_US
dc.language.isoen_USen_US
dc.subjectMicrowave assisted annealing (MWAA)en_US
dc.subjectatmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD)en_US
dc.subjectatmospheric pressure indium-gallium-zinc oxide thin-film transistors (AP-IGZO TFTs)en_US
dc.subjectpositive bias temperature instability (PBTI)en_US
dc.titleInvestigation of Microwave Assisted Annealing on AP-PECVD Fabricated In-Ga-Zn-O Thin Film Transistors under Positive Bias Temperature Stressen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)en_US
dc.citation.spage176en_US
dc.citation.epage179en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000391840000051en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper