標題: | Using KrF ELA to Improve Gate-Stacked LaAlO3/ZrO2 Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique |
作者: | Wu, Chien-Hung Chang, Kow-Ming Chen, Yi-Ming Huang, Bo-Wen Zhang, Yu-Xin Wang, Shui-Jinn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | AP-PECVD;IGZO-TFTs;Excimer Laser Annealing;Mobility Enhancement |
公開日期: | 1-三月-2018 |
摘要: | Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm(2) laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7x10(7), high channel mobility of 10 cm(2)/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface. |
URI: | http://dx.doi.org/10.1166/jnn.2018.14976 http://hdl.handle.net/11536/144589 |
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2018.14976 |
期刊: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
Volume: | 18 |
起始頁: | 1917 |
結束頁: | 1921 |
顯示於類別: | 期刊論文 |